By Ludwig bretchko
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Example text
For drift current, this can be seen as follows. The drift current is proportional to the velocity of electrons, which in t u r n is proportional to the electric field, if the latter is not too high to cause velocity saturation. The electric field along the channel results from the distribution of the total potential VDS across the channel, over a distance of length L. For a given VDS, the electric field at a point in the channel (at a given fractional distance from the source, say, at the middle of the channel) is inversely proportional to L (for very small VDS, in fact, the field is approximately constant along the channel and equal to VDSIL).
8 Factors Affecting the Extrapolated Threshold Voltage As indicated in the previous section, the value of VT depends on VSB due to the body effect. The special value of VT obtained when VSB = 0 is denoted by VTO and is a quantity used widely in MOS transistor modeling and circuit design. We now discuss the fabrication process parameters t h a t affect this value. The quantity VTO is, roughly speaking, a value of VGS around which the inversion level changes from weak, through moderate, to strong.
If it is desired to restore the number of electrons to what it was before VSB was raised, then VGS will have to be increased, as shown in Fig. 3c. The above effect of the channel-body bias on the inversion level is called the body effect, or substrate effect. Since VBS - -VSB, increasing VSB means making the body potential more negative with respect to the source. Thus decreasing the body potential (with respect to the source) decreases the number of electrons, just as decreasing the gate potential (again, with respect to the source) would.