By Sam Gharavi
The ebook covers the CMOS-based millimeter wave circuits and units and provides equipment and layout suggestions to exploit CMOS know-how for circuits working past a hundred GHz. insurance encompasses a designated description of either lively and passive units, together with modeling recommendations and function optimization. a variety of mm-wave circuit blocks are mentioned, emphasizing their layout differences from low-frequency layout methodologies. This ebook additionally covers a device-oriented circuit layout process that's crucial for extremely excessive velocity circuits and offers a few examples of device/circuit co-design that may be used for mm-wave technology.
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Extra resources for Ultra High-Speed CMOS Circuits: Beyond 100 GHz
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Razavi B (1997) RF Microelectronics, 1st edn. Prentice Hall PTR 9. Scholten AJ et al (2003) Noise modeling for RF CMOS circuit simulation. IEEE Transactions on Electron Devices, vol 50, pp 618–632 10. Triantis DP (1996) Thermal noise modeling for short-channel MOSFETs. IEEE Transactions of Electron Devices, vol 43, pp 1950–1955 11. Wiley, New York 12. Vandelin GD, Pavio AM, Rohde UL (2005) Microwave circuit design, using linear and nonlinear techniques, 2nd edn. Wiley, New York Chapter 5 Unilateralization The limited performance of transistors at high frequencies usually result in an increase in the number of gain stages which proportionally adds to the power dissipation of the system and also degradates the noise performance of the circuit.
3 Round-Table Structure 31 Fig. 6 Layout of a round-table device Fig. 7 Measured h21 , Mason’s U and MSG for a 40 μm/90 nm round-table device from the devices. 7 shows MSG, Mason’s gain (U) and h21 of a W = 40 μm round-table NMOS. The fmax is calculated by extrapolation of the Mason’s gain U for frequencies between 20 GHz to 50 GHz, a frequency range where the most reliable data occurs. As evident, measurements suggest significant improvement in both the speed and the desired gain of these devices as compared to regular RF transistors with the same number of fingers.
As the Fig. 1 suggests, the MSG curve consists of two separate regions distinguished by a kink in between. The kink happens at k = 1 and at a frequency after which the device becomes unconditionally stable. 7) It’s worth noting that at frequencies before the kink, the unconditional stability is ensured by adding as much loss to the input/output ports to drive k exactly equal to 1 and MSG is calculated based on this assumption. As a result, the internal gate and drain resistances of the device do not affect the MSG as long as they are less than the required add-on resistance to make the device stable.