By Sandeep Saini (auth.)
This ebook offers useful options for hold up and gear relief for on-chip interconnects and buses. It presents a close description of the matter of sign hold up and additional energy intake, attainable options for hold up and glitch elimination, whereas contemplating the facility relief of the full process. insurance makes a speciality of use of the Schmitt set off as a substitute method of buffer insertion for hold up and gear relief in VLSI interconnects. within the final element of the ebook, a variety of bus coding recommendations are mentioned to reduce hold up and gear in handle and knowledge buses.
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Example text
Since the RC product of an inverter is independent of its size, the relative delay can be found by adding the three relative inverter delays. e. for f1 D f2 D f3 D 3 x. This result is obtained by simply taking the derivatives of the delay with respect to the two independent tapering factors f1 and f2 . As shown in Fig. 16, the non-inverting twostage buffer solution yields the minimum delay in the load range 22 < x < 82. Fig. 15 Driving a large capacitor CL with a non-inverting buffer 20 18 Relative Delay 16 No Buffer 14 One Buffer 12 10 Two Buffers 8 Three Buffers 6 ONE INVERTER 4 TWO INVERTERS 2 0 0 20 40 60 Fanout of the inverter 80 100 Relative Delay Fig.
44 2 CMOS Buffer Fig. 12 FO4 vs. minimum feature size with VDD as parameter Fig. 13 Inverter driving a large capacitor CL with and without buffer. (a) Without buffer. 3 How to Reduce Delay The relative delay model is very useful in optimization problems because the same calculations are valid for most, if not all, technology nodes. In this section we will consider how to minimize the delay when the load capacitance is much larger than the input capacitance of the driver inverter. The problem is shown in Fig.
Power dissipation in CMOS circuits occurs because of the following components. 1 Dynamic Power Dissipation Dynamic power dissipation is related to the operation of circuit. Each time the capacitor CL gets charged through the PMOS transistor, its voltage rises from 0 to VDD , and a certain amount of energy is drawn from the power supply. A part of this energy is dissipated in the PMOS device, while the remainder is stored on the load capacitor. During the high-to-low transition, this capacitor is discharged, and the stored energy is dissipated in the NMOS transistor [1, 6].