By P. Heremans, R. Bellens, G. Groeseneken (auth.), Cheng T. Wang Ph.D. (eds.)
As equipment dimensions lessen, hot-carrier results, that are due in general to the presence of a excessive electrical box contained in the machine, have gotten a tremendous layout situation. at the one hand, the unsafe effects-such as transconductance degradation and threshold shift-need to be minimized or, if attainable, shunned altogether. however, functionality reminiscent of the programming potency of nonvolatile thoughts or the provider speed contained in the devices-need to be maintained or more suitable by using submicron applied sciences, even within the presence of a discounted energy provide. therefore, one of many significant demanding situations dealing with MOS layout engineers this day is to harness the hot-carrier results in order that, with no sacrificing product functionality, degradation could be stored to a minimal and a reli capable layout received. to complete this, the actual mechanisms re sponsible for the degradations should still first be experimentally pointed out and characterised. With sufficient versions therefore received, steps will be taken to optimize the layout, in order that an enough point of caliber assur ance in equipment or circuit functionality may be accomplished. This publication advert attire those hot-carrier layout concerns for MOS units and circuits, and is used essentially as a qualified consultant for technique improvement engi neers, gadget engineers, and circuit designers who're drawn to the most recent advancements in hot-carrier degradation modeling and hot-carrier reliability layout suggestions. it could possibly even be regarded as a reference publication for graduate scholars who've a little analysis pursuits during this excit ing, but someday debatable, field.
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Extra info for Hot Carrier Design Considerations for MOS Devices and Circuits
Example text
30] also is not able to accurately predict the temperature dependence of the hot-carrier population, in contrast to the quasithermal-equilibrium approach [31]. This originates from the fact that the lattice temperature is neglected altogether in Eq. 2). Though not completely rigourous, as explained above, the modified lucky-carrier model of Tam et al. [30], as formulated in Eq. 2), is of crucial importance for the understanding of many hot-carrier related phenomena. Notwithstanding its simplicity, Eq.
There are, however, also certain limitations for the application of the substrate hot-carrier injection method. , electrons in n-channel MOSFETs, and holes in the case of p-channel devices). Therefore, it is not possible to study combined effects of electron and hole trapping, which, for example, have been claimed to be responsible for the interface trap build-up [58]. Another limitation is the fact that the injection is not perfectly uniform near the source and drain junctions, respectively. Due to the space-charge region around the junctions (especially for high reverse substrate bias), the transverse field, which accelerates the carriers towards the oxide, decreases locally.
MOSFET, with stress-induced acceptor-type interface traps in the upper half of the Si-bandgap (Fig. 17, dashed line). These interface traps are electrically neutral when the electron quasi-Fermi level is lower than the respective energetic position, and negatively charged when it is higher. If the gate voltage is small as compared to the drain voltage, the electron quasi-Fermi level in the vicinity of the drain junction where the avalanche multiplication occurs is far away from the conduction band.