By John D. Cressler
Regardless of the way you slice it, semiconductor units strength the communications revolution. Skeptical? think for a second that you may turn a swap and immediately eliminate all of the built-in circuits from planet Earth. A moment’s mirrored image may persuade you that there's now not a unmarried box of human exercise that might now not come to a grinding halt, be it trade, agriculture, schooling, drugs, or leisure. existence, as we've come to anticipate it, could easily stop to exist.
Drawn from the great and well-reviewed Silicon Heterostructure Handbook, this quantity covers SiGe circuit functions within the genuine international. Edited via John D. Cressler, with contributions from top specialists within the box, this ebook provides a wide evaluate of the advantages of SiGe for rising communications structures. insurance spans new ideas for more suitable LNA layout, RF to millimeter-wave IC layout, SiGe MMICs, SiGe Millimeter-Wave ICs, and instant development blocks utilizing SiGe HBTs. The e-book presents a glimpse into the long run, as anticipated by way of leaders.
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Extra info for Circuits and applications using silicon heterostructure devices
Sample text
47. JD Cressler, EF Crabbe´, JH Comfort, JY-C Sun, and JMC Stork. An epitaxial emitter cap SiGebase bipolar technology for liquid nitrogen temperature operation. IEEE Electron Device Letters 15:472–474, 1994. 48. JA Babcock, JD Cressler, LS Vempati, SD Clark, RC Jaeger, and DL Harame. Ionizing radiation tolerance of high performance SiGe HBTs grown by UHV/CVD. IEEE Transactions on Nuclear Science 42:1558–1566, 1995. 49. LS Vempati, JD Cressler, RC Jaeger, and DL Harame. Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors.
Not to be outdone, Shockley rapidly developed a theoretical basis for explaining how this clever object worked, and went on to demonstrate the first true bipolar junction transistor (BJT) in 1951 [27]. The first BJT was made, ironically in the present context, from Ge. The first silicon BJT was made by Teal in 1954 using grown junction techniques. The first diffused silicon BJT was demonstrated in 1956 [28], and the first epitaxially grown silicon BJT was reported in 1960, see Ref. [2]. The concept of the HBT is surprisingly an old one, dating in fact to the fundamental BJT patents filed by Shockley in 1948 [29].
32–33. 71. P Balk. Surface properties of oxidized germanium-doped silicon. Journal of the Electrochemical Society 118:494–495, 1971. 72. H Daembkes, H-J Herzog, H Jorke, H. Kibbel, and E Kasper. The n-channel SiGe/Si modulation doped field-effect transistor. IEEE Transactions on Electron Devices 33:633–638, 1986. 2007 9:51am Compositor Name: JGanesan Circuits and Applications Using Silicon Heterostructure Devices 73. TP Pearsall and JC Bean. Enhancement and depletion-mode p-channel GexSi1Àx modulation-doped field effect transistor.