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3D TCAD Simulation for Semiconductor Processes, Devices and by Simon Li

By Simon Li

Technology computer-aided layout, or TCAD, is necessary to today’s semiconductor know-how and anyone operating during this must recognize anything approximately TCAD. This e-book is ready the best way to use software program to fabricate and try out nearly semiconductor units in 3D. It brings to lifestyles the subject of semiconductor gadget physics, with a hands-on, instructional method that de-emphasizes summary physics and equations and emphasizes genuine perform and vast illustrations. assurance contains a complete library of units, representing the cutting-edge know-how, corresponding to SuperJunction LDMOS, GaN LED units, etc.

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Additional info for 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

Example text

The valence band mixing effect for bulk material has been taken into account since the coupling between heavy and light holes has been included in the above equations. 61) is the [100] crystal direction, and is different from the [110] direction. For many applications, it is desirable to average the energy dispersion in both the [100] and [110] directions. 61) by g2 þ g3 =2. This is called the axial approximation. The simulator provides an option to turn on this approximation. 65) The quality of the fit is found to be reasonable for practical cases.

We also note the total concentration of impurities (CT) appears on the left-hand side but only the activated concentration (CA) is found on the right-hand side. The relationship between these two quantities is complex and beyond the scope of this book. 4 Inactive Impurities Some types of impurities are able to diffuse when paired with point-defects without being activated. Examples of this behavior include n-type dopants like phosphorous and antimony. Please note that the total concentration CT appears on both sides of the equation here.

The pair fluxes are the contributions to the total vacancy flux from the impurity diffusion and will be described in a subsequent section. The unpaired vacancy flux can be written as [12]: ! CV ƒ! 2) It is important to note that the equilibrium vacancy concentration CVà is a function of Fermi level [13]. This flux accounts correctly for the effect of an electric field on the charged portion of the defect concentration. 3) where KR is the bulk recombination coefficient, and CI and CÃV are the interstitial and interstitial equilibrium concentration, respectively.

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